RT Journal Article
T1 Statistical Anomalies of Bitflips in SRAMs to Discriminate SBUs from MCUs
A1 Clemente Barreira, Juan Antonio
A1 Franco Peláez, Francisco Javier
A1 Villa, Francesca
A1 Baylac, Maud
A1 Rey, Solenne
A1 Mecha López, Hortensia
A1 Agapito Serrano, Juan Andrés
A1 Puchner, Helmut
A1 Hubert, Guillaume
A1 Velazco, Raoul
AB Recently, the occurrence of multiple events in static tests has been investigated by checking the statistical distribution of the difference between the addresses of the words containing bitflips. That method has been successfully applied to Field Programmable Gate Arrays (FPGAs) and the original authors indicate that it is also valid for SRAMs. This paper presents a modified methodology that is based on checking the XORed addresses with bitflips, rather than on the difference. Irradiation tests on CMOS 130 & 90 nm SRAMs with 14-MeV neutrons have been performed to validate this methodology. Results in high-altitude environments are also presented and cross-checked with theoretical predictions. In addition, this methodology has also been used to detect modifications in the organization of said memories. Theoretical predictions have been validated with actual data provided by the manufacturer.
PB IEEE
SN 0018-9499
YR 2016
FD 2016-08
LK https://hdl.handle.net/20.500.14352/18959
UL https://hdl.handle.net/20.500.14352/18959
LA eng
NO “© © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.”
NO Ministerio de Ciencia e Innovación (MICINN)
NO Mobility grant “José Castillejo” for professors and researchers
NO UCM-BSCH
DS Docta Complutense
RD 6 abr 2025