RT Book, Section
T1 A procedure for accurate noise measurements of one port devices with high reflection coefficients
A1 Miranda Pantoja, José Miguel
A1 Sebastián Franco, José Luis
AB This work presents a procedure to reduce effectively the uncertainty of noise measurements of highly reflective one-port DUT's. This procedure consists of inserting an attenuator between the calibration reference plane and the DUT. The measurement RSS uncertainty has been calculated analytically and an excellent improvement of the accuracy and repeatability has been obtained when attenuations of moderate values were used.
PB IEEE
SN 0-7803-1778-5
YR 1994
FD 1994
LK https://hdl.handle.net/20.500.14352/60820
UL https://hdl.handle.net/20.500.14352/60820
LA eng
NO [1] J.L. Hesler, "Noise Measurement of Schottky Diodes", Master Thesis, Faculty of School of Engineering and Applied Science, University of Virginia, Charlottesville, May 1991.[2] J.M. Miranda, A. Grub, V. Krozer and J.L. Sebastián, "Accuracy of non-oscillating one-port noise measurements", submitted for publication.[3] D. Gasquet, J.C. Vaissiere and J.P. Nougier, "New Method for wide band measurement of noise temperature of one-port networks at high pulsed bias", in Sixth International Conference on noise in Physical Systems, NBS Special Publication, vol. 614, 1981, p. 305.[4] W. Peatman and T. Crowe, "Design and fabrication of 0.5 Fm GaAs Schottky barrier diodes for low noise Terahertz receiver applications", Int. J. Infrared and Millimeter Waves, vol. 11, no. 3, pp 355-365, 1990.[5] A. Jelenski, A. Grtib, V. Krozer, and H.L. Hartnagel, "New approach to the Design and the Fabrication of THz Schottky Barrier Diodes", IEEE Trans. on MTT, vol. 41 no. 4 April 1993, pp 549.[6] Herbert Zirath, "High Frequency Noise and Current Voltage Characteristics of mm-wave Platinum n-n+-GaAs Schottky Barrier Diodes", Journal of Applied Physics 60 (4), August 1986.[7] Michael Trippe, Gijs Bosman and Aldert Van Der Ziel, "Transit Time Effects in the Noise of Schottky Barrier Diodes", IEEE Trans. on MTT vol34 no 11, November 1986.[8] A. Jelenski, Erik Kollberg and Herbert Zirath, "Broad Band Noise Mechanisms and Noise Measurements of Metal- Semiconductor Junctions", IEEE Trans. on MTT vol 34 no 11, November 1986.[9] Slawomir Palczewski, Andrzej Jelenski, Andreas Grtib, Hans L. Hartnagel, "Noise Characterization of Schottky Barrier Diodes for High Frequency Mixing Applications", IEEE Microwave and Guided Wave Letters, vol 2 no 11, November 19912.
NO IEEE MTT-S International Microwave Symposium (1994. San Diego, California, USA). © 1994 IEEE. This work has partially been funded by the Erasmus Researcher Exchange Programme and the Secretaria General del Plan Nacional de I+D (project PTR91-0037). The experimental measurements were made at the Institut flir Hochfrequenztechnik, Technische Hochschule of Darmstadt, Germany.Special acknowledgment to Professor Hans L. Hartnagel, who has facilitated the cooperation between the two Universities involved in this work, making many stimulating discussions possible.The authors also wish to thank Jian-Min Miao and Rolf Riemenschneider for their assistance in the automation of  the measurements. Finally, Dr. Luis Vkquez is acknowledged for all the administrative work.
NO Erasmus Researcher Exchange Programme
NO Secretaria General del Plan Nacional de I+D
NO Institut flir Hochfrequenztechnik, Technische Hochschule of Darmstadt, Germany
DS Docta Complutense
RD 3 may 2024