RT Journal Article
T1 Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrix
A1 García, J.A.
A1 Plugaru, R
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Tate, T. J.
AB The luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O has been studied by photoluminescence (PL) and cathodoluminescence (CL) in the scanning electron microscope. Annealing in nitrogen causes the formation of oxide species and Er-Si complexes or precipitates as well a spectral changes in the visible and infrared ranges. The main CL emission takes place in the visible range while PL spectra reveal intense visible and infrared emission. CL spectra show blue-violet, or green, emission bands whose relative intensities depend on the post-implantation annealing temperature. The PL spectra show a blue-violet band with a series of lines in the violet region related to phonon assisted transitions as well as different emission bands in the range 1200-1500 nm. The influence of the annealing-induced structural changes on the observed spectra is discussed.
PB Cambridge Univ Press
SN 1286-0042
YR 2004
FD 2004-07
LK https://hdl.handle.net/20.500.14352/50952
UL https://hdl.handle.net/20.500.14352/50952
LA spa
NO © EDP Sciences.International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10). (10.2003.Batz sur Mer, FRANCE ).This work has been supported by MCYT (Project MAT 2000-2119). R. Plugaru acknowledges MECD for the research grantSB2000-0164.
NO MCYT
NO MECD
DS Docta Complutense
RD 18 abr 2025