TY  - CHAP
AU  - López, I.
AU  - Nogales Díaz, Emilio
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
PY  - 2014
DO  - 10.1117/12.2037627
SN  - 978-0-8194-9900-4
UR  - https://hdl.handle.net/20.500.14352/35967
AB  - Ga_2O_3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1x10^(13) to 4x10^(15) at/cm^(2). The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channeling...
LA  - eng
PB  - Spie-Int Soc Optical Engineering
KW  - Beta-Ga_2O_3 single-crystals
KW  - Optical-properties
KW  - Radiation-damage
KW  - Nanowires
KW  - Gan
TI  - Doping of Ga_2O_3 bulk crystals and NWs by ion implantation
TY  - book part
ER  -