RT Journal Article
T1 Inactivity windows in irradiated CMOS analog switches
A1 Franco Peláez, Francisco Javier
A1 Zong, Yi
A1 Agapito Serrano, Juan Andrés
AB Radiation tests have shown the existence of inactivity windows in analog switches. It means that the devices lose their ability to switch between ON and OFF states if the total radiation dose is placed between two characteristic values. Once the total radiation dose goes beyond the top value of the window, the switching ability reappears. A physical mechanism based on the evolution of the threshold voltage of irradiated NMOS transistors is proposed in this paper. Finally, consequences of inactivity windows in the conception of radiation tests are discussed.
PB IEEE-Inst Electrical Electronics Engineers Inc
SN 0018-9499
YR 2006
FD 2006-08-28
LK https://hdl.handle.net/20.500.14352/51321
UL https://hdl.handle.net/20.500.14352/51321
LA eng
NO (c) 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
NO Ministerio de Educación y Ciencia
NO CERN
DS Docta Complutense
RD 20 abr 2025