RT Journal Article
T1 Cathodoluminescence study of GaN epitaxial layers
A1 Cremades Rodríguez, Ana Isabel
A1 Piqueras De Noriega, Francisco Javier
A1 Xavier, C.
A1 Monteiro, T.
A1 Pereira, E.
A1 Meyer, B.K.
A1 Hofmann, D. M.
A1 Fischer, S.
AB GaN epitaxial layers have been investigated by cathodoluminescence (CL) in the scanning electron microscope (SEM). The most prominent feature of the spectra is a complex band at 2.2 eV, whose evolution with temperature and excitation density suggests emission mechanisms involving a deep center and donor-donor or donor-acceptor pairs. Time resolved photoluminescence (TRPL) measurements confirm the involvement of a deep center in the emission. CL images reveal that the centers responsible for this emission decorate grain boundaries. Emission bands al 2.87 eV and 1.31 eV have been also detected in the films.
PB American Institute of Physics
SN 0021-8979
YR 1996
FD 1996-12-15
LK https://hdl.handle.net/20.500.14352/58859
UL https://hdl.handle.net/20.500.14352/58859
LA eng
NO © 1996 - Elsevier Science S.A..International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 96) (4. 1996.  El Escorial, España).A. Cremades thanks the Universidad Complutense for a predoctoral grant. This work has been partially supported by DGICYT Projects No. HP95-98B and PB93- 1256.
NO DGICYT (Spain)
NO Universidad Complutense
DS Docta Complutense
RD 4 abr 2025