TY  - JOUR
AU  - Cremades Rodríguez, Ana Isabel
AU  - Piqueras De Noriega, Francisco Javier
AU  - Xavier, C.
AU  - Monteiro, T.
AU  - Pereira, E.
AU  - Meyer, B.K.
AU  - Hofmann, D. M.
AU  - Fischer, S.
PY  - 1996
DO  - 10.1016/S0921-5107(96)01712-6
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/58859
T2  - Journal of Applied Physics
AB  - GaN epitaxial layers have been investigated by cathodoluminescence (CL) in the scanning electron microscope (SEM). The most prominent feature of the spectra is a complex band at 2.2 eV, whose evolution with temperature and excitation density suggests...
LA  - eng
M2  - 230
PB  - American Institute of Physics
KW  - Gallium Nitride
TI  - Cathodoluminescence study of GaN epitaxial layers
TY  - journal article
VL  - 42
ER  -