TY  - JOUR
AU  - Rezaei, Mohammadreza
AU  - Martín Holgado, Pedro
AU  - Morilla, Yolanda
AU  - Franco Peláez, Francisco Javier
AU  - Fabero Jiménez, Juan Carlos
AU  - Mecha López, Hortensia
AU  - Puchner, Helmut
AU  - Hubert, Guillaume
AU  - Clemente Barreira, Juan Antonio
PY  - 2020
DO  - 10.1109/TNS.2020.3023287
SN  - 0018-9499
UR  - https://hdl.handle.net/20.500.14352/7497
T2  - IEEE Transactions on Nuclear Science
AB  - This article presents an experimental study on the sensitivity of a commercial-off-the-shelf (COTS) bulk 65-nm static random access memory (SRAM) under 15.6 MeV proton irradiation when powered up at ultralow bias voltage. Tests were run on standby and...
LA  - eng
M2  - 2188
PB  - IEEE-Inst Electrical Electronics Engineers Inc
KW  - Ionizing dose influence
KW  - Single-event upsets
KW  - Soft-error
KW  - Induced sees
KW  - Low-power
KW  - Voltage
KW  - Impact
TI  - Evaluation of a COTS 65-nm SRAM Under 15 MeV Protons and 14 MeV Neutrons at Low VDD
TY  - journal article
VL  - 67
ER  -