%0 Journal Article
%A Ramírez, J. G.
%A Schmidt, Rainer
%A Sharoni, A.
%A Gómez, M. E.
%A Schuller, Ivan K.
%A Patiño, Edgar J.
%T Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO_(2)
%D 2013
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/34809
%X Temperature dependent dielectric spectroscopy measurements on vanadium dioxide thin films allow us to distinguish between the resistive, capacitive, and inductive contributions to the impedance across the metal-insulator transition (MIT). We developed a single, universal, equivalent circuit model to describe the dielectric behavior above and below the MIT. Our model takes account of phase-coexistence of metallic and insulating regions. We find evidence for the existence at low temperature of ultra-thin threads as described by a resistor-inductor element. A conventional resistorcapacitor element connected in parallel accounts for the insulating phase and the dielectric relaxation.
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