2026-07-31T10:59:22Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/1109452025-09-01T15:07:24Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Olea Ariza, Javier author Gonzalo, J. author Siegel, B. author Braña, A. F. author Godoy Pérez, G. author Benítez Fernández, R. author Caudevilla Gutiérrez, Daniel author Algaidy, Sari author Pérez Zenteno, Francisco José author Duarte Cano, Sebastián author Prado Millán, Álvaro Del author García Hemme, Eric author García Hernansanz, Rodrigo author Pastor Pastor, David author San Andrés Serrano, Enrique author Martil De La Plaza, Ignacio author Benítez Fernández, Rafael author 2024 Supersaturated GaP is of interest for the photovoltaic field since optical transitions at energies below the bandgap (2.26 eV) could enhance the overall device efficiency up to theoretically 60%. We have previously demonstrated that Ti supersaturated GaP can be obtained by means of ion implantation and pulsed-laser melting with high structural quality and measured its below-bandgap photoconductivity. In this work we report the first results of a GaP:Ti based photovoltaic device. We have fabricated and measured photovoltaic devices with a GaP:Ti absorber layer showing enhanced external quantum efficiency at wavelengths above 550 nm. Also, we have measured the absorption coefficient (around 104 cm−1) and refractive index of this absorber layer. Finally, current-voltage curves in darkness were measured and analyzed using a two-diodes model, showing improvable characteristics. Ideas to enhance the properties of the devices are suggested. Olea, J., Gonzalo, J., Siegel, J., Braña, A. F., Godoy-Pérez, G., Benítez-Fernández, R., Caudevilla, D., Algaidy, S., Pérez-Zenteno, F., Duarte-Cano, S., Prado, A. D., García-Hemme, E., García-Hernansanz, R., Pastor, D., San-Andrés, E., & Mártil, I. (2024). Optoelectronic properties of GaP:Ti photovoltaic devices. Materials Today Sustainability, 28, 101008. https://doi.org/10.1016/j.mtsust.2024.101008 10.1016/j.mtsust.2024.101008 https://hdl.handle.net/20.500.14352/110945 2589-2347 https://doi.org/10.1016/j.mtsust.2024.101008 https://www.sciencedirect.com/science/article/pii/S2589234724003440 Optoelectronic properties of GaP:Ti photovoltaic devices