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Optoelectronic properties of GaP:Ti photovoltaic devices Olea Ariza, Javier Gonzalo, J. Siegel, B. Braña, A. F. Godoy Pérez, G. Benítez Fernández, R. Caudevilla Gutiérrez, Daniel Algaidy, Sari Pérez Zenteno, Francisco José Duarte Cano, Sebastián Prado Millán, Álvaro Del García Hemme, Eric García Hernansanz, Rodrigo Pastor Pastor, David San Andrés Serrano, Enrique Martil De La Plaza, Ignacio Benítez Fernández, Rafael Supersaturated GaP is of interest for the photovoltaic field since optical transitions at energies below the bandgap (2.26 eV) could enhance the overall device efficiency up to theoretically 60%. We have previously demonstrated that Ti supersaturated GaP can be obtained by means of ion implantation and pulsed-laser melting with high structural quality and measured its below-bandgap photoconductivity. In this work we report the first results of a GaP:Ti based photovoltaic device. We have fabricated and measured photovoltaic devices with a GaP:Ti absorber layer showing enhanced external quantum efficiency at wavelengths above 550 nm. Also, we have measured the absorption coefficient (around 104 cm−1) and refractive index of this absorber layer. Finally, current-voltage curves in darkness were measured and analyzed using a two-diodes model, showing improvable characteristics. Ideas to enhance the properties of the devices are suggested. 2024-11-22T10:45:08Z 2024-11-22T10:45:08Z 2024 journal article Olea, J., Gonzalo, J., Siegel, J., Braña, A. F., Godoy-Pérez, G., Benítez-Fernández, R., Caudevilla, D., Algaidy, S., Pérez-Zenteno, F., Duarte-Cano, S., Prado, A. D., García-Hemme, E., García-Hernansanz, R., Pastor, D., San-Andrés, E., & Mártil, I. (2024). Optoelectronic properties of GaP:Ti photovoltaic devices. Materials Today Sustainability, 28, 101008. https://doi.org/10.1016/j.mtsust.2024.101008 10.1016/j.mtsust.2024.101008 https://hdl.handle.net/20.500.14352/110945 2589-2347 https://doi.org/10.1016/j.mtsust.2024.101008 https://www.sciencedirect.com/science/article/pii/S2589234724003440 eng P2018/EMT-4308 info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/TEC2017-84378-R/ES/FOTODETECTORES PARA INFRARROJO CERCANO Y MEDIO BASADOS EN SEMICONDUCTORES HIPERDOPADOS COMPATIBLES CON TECNOLOGIA CMOS/ info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-116508RB-I00/ES/CONTACTOS SELECTIVOS EMERGENTES PARA CELULAS SOLARES DE SI SIN DOPADO FABRICADOS MEDIANTE PULVERIZACION DE ALTA PRESION/ info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-117498RB-I00/ES/MEJORA DE LA RESPUESTA DE FOTODETECTORES DE IR BASADOS EN SEMICONDUCTORES DEL GRUPO IV HIPERDOPADOS/ TED2021-130894B–C21/C22 PID2021-123190OB-I00 PRE2018-083798 CT58/21-CT59/ CT19/23-INVM-35 CT19/23-INVM-27 TED2021- 129624B–C43 http://creativecommons.org/licenses/by/4.0/ open access Attribution 4.0 International Elsevier