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oai:docta.ucm.es:20.500.14352/1218162025-09-01T17:53:49Zcom_20.500.14352_14col_20.500.14352_15

Proton irradiation effects on silicon heterojunction solar cells with MoOx selective contacts Duarte Cano, Sebastián Pérez Zenteno, Francisco José Caudevilla Gutiérrez, Daniel Olea Ariza, Javier San Andrés Serrano, Enrique Prado Millán, Álvaro Del Benítez Fernández, Rafael García Hemme, Eric Rezaei, Mohammadreza Clemente Barreira, Juan Antonio Algaidy, S. Torres, I. Barrio, R. Ros, E. Puigdollers, J. Ortega, P. Voz, C. García Hernansanz, Rodrigo In this study, we investigate the effects of proton irradiation on silicon-based heterojunction and molybdenum oxide (MoOx) selective contact solar cells. The main idea is to study their potential application in small satellites for measurement and monitoring. The irradiation dose simulates the aggressive environment found in Low Earth Orbit (LEO), where many satellites currently use Group III-VI (GaInP/GaAs/Ge) solar cells due to their superior efficiency, albeit at a higher cost. The experimental approach includes fabrication, irradiation, and characterization methods. Our results show a decrease in fill factor (F.F.) and overall efficiency after irradiation, mainly caused by a decrease in shunt resistance and an increase in series resistance. In addition, open-circuit voltage (Voc) and short-circuit current (Isc) may be affected by displacement damage defects caused by the irradiation process within the active region or by the formation of new point defects. 2025-06-25T10:37:15Z 2025-06-25T10:37:15Z 2025-06-25T10:37:15Z 2025 journal article https://hdl.handle.net/20.500.14352/121816 1369-8001 10.1016/j.mssp.2025.109312 1873-4081 eng info:eu-repo/grantAgreement/EC/H2020/101008126/EU info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-116508RB-I00/ES/CONTACTOS SELECTIVOS EMERGENTES PARA CELULAS SOLARES DE SI SIN DOPADO FABRICADOS MEDIANTE PULVERIZACION DE ALTA PRESION/ info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-117498RB-I00/ES/MEJORA DE LA RESPUESTA DE FOTODETECTORES DE IR BASADOS EN SEMICONDUCTORES DEL GRUPO IV HIPERDOPADOS/ info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-112916GB-I00/ES/ESTUDIO DE LOS EFECTOS DE LA RADIACION Y PROCESAMIENTO EFICIENTE DE IMAGENES HIPERESPECTRALES PARA "NUEVO ESPACIO"/ PID2022138434OB-C51 TED2021-130894B-C21 TED2021-129758B-C32 CT58/21-CT59/21 CT19/23-INVM-27 S. Duarte-Cano, F. Pérez-Zenteno, D. Caudevilla, J. Olea, E. San Andrés, A.D. Prado, R. Benítez-Fernández, E. García-Hemme, M. Rezaei, J.A. Clemente, S. Algaidy, I. Torres, R. Barrio, E. Ros, J. Puigdollers, P. Ortega, C. Voz, R. García-Hernansanz, Proton irradiation effects on silicon heterojunction solar cells with MoOx selective contacts, Materials Science in Semiconductor Processing 190 (2025) 109312. https://doi.org/10.1016/j.mssp.2025.109312. http://creativecommons.org/licenses/by/4.0/ open access Attribution 4.0 International Elsevier