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oai:docta.ucm.es:20.500.14352/1241352025-09-20T00:11:25Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Casado Aguilar, Pablo author Pisarra, Michele author Calleja, Fabian author Díaz Blanco, Cristina author Martín García, Fernando author Lopez Vazquez De Parga, Amadeo author Garnica, Manuela author 2025-08-03 Defects in transition metal dichalcogenides (TMDs) are pivotal in modulating their electronic, optical, and catalytic properties. Investigating these defects is essential for advancing both fundamental knowledge and practical applications. In this study, we examine the individual defects in a monolayer of MoTe2 supported on graphene grown on an Ir(111) substrate by means of scanning tunneling microscopy (STM). Charging rings appear at distinct bias voltages, revealing ionization levels of doping centers located either below or above the Fermi level. Although direct STM visualization of point defects was not achieved, the combination of scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations enabled the identification of the structural origins of the charge states. Our results demonstrate a powerful tool for uncovering the electronic and structural characteristics of atomic-scale defects in MoTe2, contributing to the understanding of defect-driven electronic properties in transition metal dichalcogenides. P. Casado, M. Pisarra, F. Calleja, C. Díaz, F. Martín, A. L. Vázquez de Parga and M. Garnica. Nanoscale Adv., 2025, 7, 5637–5645 10.1039/d5na00501a https://hdl.handle.net/20.500.14352/124135 https://doi.org/10.1039/D5NA00501A https://pubs.rsc.org/en/content/articlelanding/2025/na/d5na00501a Defect identification in monolayer MoTe2 through tunneling tip-induced charging and theoretical analysis