2026-06-01T19:13:01Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/1253632025-10-25T00:00:28Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Santos Solva Junior, Romualdo author Martín Merodio, Alejandro author Martínez, E. A. author Gallego Toledo, Fernando author Nemes, Norbert Marcel author Bruno, Flavio Yair author 2025-10-22 We report on the successful stabilization of a two-dimensional electron gas (2DEG) in Si3N4/AlOx//KTaO3(001) heterostructures. Electronic transport measurements reveal that the AlOx layer thickness critically modulates the 2DEG mobility, with an optimal thickness achieving a mobility of μ ≈ 444 cm2 V−1 s−1 at 10 K, which is, despite the amorphous granular nature of the AlOx layers, comparable to epitaxial oxide-based 2DEGs. Thicker AlOx layers reduce mobility and induce a Kondo-like upturn in resistance at low temperatures, which is attributed to oxygen depletion extending into the substrate and enhancing defect scattering. Additionally, the samples remain metallic after six months of exposure to ambient conditions, with high-mobility samples maintaining stable carrier densities and mobilities and experiencing only minor increases in sheet resistance over time. These findings highlight the potential of KTaO3 2DEGs for long-term electronic applications, providing valuable insights for optimizing oxide heterostructures for future device technologies. R.S. Silva, A.M. Merodio, E.A. Martínez, F. Gallego, N.M. Nemes, and F.Y. Bruno, “Electronic transport properties and stability of 2D electron gases on Si3N4/AlOx//KTaO3 heterostructures,” Journal of Applied Physics 138(16), 165301 (2025). 0021-8979 10.1063/5.0293470 https://hdl.handle.net/20.500.14352/125363 1089-7550 https://doi.org/10.1063/5.0293470 https://pubs.aip.org/aip/jap/article/138/16/165301/3368884/Electronic-transport-properties-and-stability-of Electronic transport properties and stability of 2D electron gases on Si3N4/AlOx//KTaO3 heterostructures