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oai:docta.ucm.es:20.500.14352/129992024-08-29T15:50:20Zcom_20.500.14352_14col_20.500.14352_15

Direct observation of tunnelled intergrowth in SnO2/Ga2O3 complex nanowires Alonso Orts, Manuel Nogales Díaz, Emilio Méndez Martín, María Bianchi Rigby, Oliver M. Stamp, Alice V. Hindmarsh, Steve A. Sánchez, Ana M. © 2019 IOP Publishing We thank JJP Peters for his input on the multislice ADF simulation. This work has been supported by MINECO projects MAT-2015-65274-R/FEDER and M-ERANET PCIN-2017-106. MA-O acknowledges financial support from MECD (FPU contract). beta-Ga_2O_3 intergrowths have been revealed in the SnO_2 rutile structure when SnO_2/Ga_2O_3 complex nanostructures are grown by thermal evaporation with a catalyst-free basis method. The structure is formed by a Ga_2O_3 nanowire trunk, around which a rutile SnO_2 particle is formed with [001] aligned to the [010] Ga_2O_3 trunk axis. Inside the SnO_2 particle, beta-Ga_2O_3 units occur separated periodically by hexagonal tunnels in the (210) rutile plane. Orange (620 nm) optical emission from tin oxide, with a narrow linewidth indicating localised electronic states, may be associated with this beta-Ga_2O_3 intergrowth. 2023-06-17T13:18:47Z 2023-06-17T13:18:47Z 2019-02-01 journal article 0957-4484 10.1088/1361-6528/aaefc4 https://hdl.handle.net/20.500.14352/12999 http://dx.doi.org/10.1088/1361-6528/aaefc4 http://iopscience.iop.org eng MAT-2015-65274-R/FEDER M-ERA.NET PCIN-2017-106 MECD (FPU contract) https://creativecommons.org/licenses/by-nc-nd/3.0/es/ open access Atribución-NoComercial-SinDerivadas 3.0 España IOP Publishing