2026-06-08T09:11:00Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/1367502026-05-19T00:19:47Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Khaouani, Mohammed author Sessa, Andrea author De Stefano, Sebastiano author Rouigueb, Hichem author Belbachir, Mohammed Anes author Mazzotti, Adolfo author Pelella, Aniello author Durante, Ofelia author Di Bartolomeo, Antonio author García Hemme, Eric author 2026-05 Silicon PN junctions remain central to optoelectronic technologies due to their maturity and CMOS compatibility. We report the fabrication and comprehensive optoelectronic characterization of a silicon PN-junction photodiode demonstrating stable operation over a wide temperature range. The device exhibits excellent diode behavior, with a rectification ratio exceeding four orders of magnitude, an ideality factor close to unity above 0.3 V, and a series resistance below 100 Ω. Under white-light illumination, the photodiode shows a linear photocurrent response over broad optical power and temperature ranges, achieving an average responsivity of 0.3 A W−1. We implement a machine learning framework based on an Artificial Neural Network to perform global parameter estimation, demonstrating its effectiveness in generalizing across diverse experimental datasets. Moreover, we propose a comprehensive analytical model, validated by Atlas–Silvaco simulations, that successfully captures charge transport and photogeneration mechanisms. This integrated approach, combining experimental measurements, machine learning, numerical simulations and analytical modelling, provides a robust performance benchmark and deeper insights for optimizing silicon-based optoelectronic devices. Khaouani, Mohammed, et al. «Experiment and Simulation in Silicon PN-Junction Photodetectors: Insights into Electrical and Optical Transport». Physica B: Condensed Matter, vol. 730, mayo de 2026, p. 418479. DOI.org (Crossref), https://doi.org/10.1016/j.physb.2026.418479. 0921-4526 10.1016/j.physb.2026.418479 https://hdl.handle.net/20.500.14352/136750 1873-2135 https://dx.doi.org/10.1016/j.physb.2026.418479 https://www.sciencedirect.com/science/article/pii/S0921452626002371 Experiment and simulation in silicon PN-junction photodetectors: insights into electrical and optical transport