2026-06-08T08:51:16Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/1367502026-05-19T00:19:47Zcom_20.500.14352_14col_20.500.14352_15

Khaouani, Mohammed Sessa, Andrea De Stefano, Sebastiano Rouigueb, Hichem Belbachir, Mohammed Anes Mazzotti, Adolfo Pelella, Aniello Durante, Ofelia Di Bartolomeo, Antonio García Hemme, Eric 2026-05-18T18:43:07Z 2026-05-18T18:43:07Z 2026-05 Khaouani, Mohammed, et al. «Experiment and Simulation in Silicon PN-Junction Photodetectors: Insights into Electrical and Optical Transport». Physica B: Condensed Matter, vol. 730, mayo de 2026, p. 418479. DOI.org (Crossref), https://doi.org/10.1016/j.physb.2026.418479. 0921-4526 10.1016/j.physb.2026.418479 https://hdl.handle.net/20.500.14352/136750 1873-2135 https://dx.doi.org/10.1016/j.physb.2026.418479 https://www.sciencedirect.com/science/article/pii/S0921452626002371 Silicon PN junctions remain central to optoelectronic technologies due to their maturity and CMOS compatibility. We report the fabrication and comprehensive optoelectronic characterization of a silicon PN-junction photodiode demonstrating stable operation over a wide temperature range. The device exhibits excellent diode behavior, with a rectification ratio exceeding four orders of magnitude, an ideality factor close to unity above 0.3 V, and a series resistance below 100 Ω. Under white-light illumination, the photodiode shows a linear photocurrent response over broad optical power and temperature ranges, achieving an average responsivity of 0.3 A W−1. We implement a machine learning framework based on an Artificial Neural Network to perform global parameter estimation, demonstrating its effectiveness in generalizing across diverse experimental datasets. Moreover, we propose a comprehensive analytical model, validated by Atlas–Silvaco simulations, that successfully captures charge transport and photogeneration mechanisms. This integrated approach, combining experimental measurements, machine learning, numerical simulations and analytical modelling, provides a robust performance benchmark and deeper insights for optimizing silicon-based optoelectronic devices. eng http://creativecommons.org/licenses/by/4.0/ open access Attribution 4.0 International Experiment and simulation in silicon PN-junction photodetectors: insights into electrical and optical transport journal article