2026-06-08T09:10:39Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/1367502026-05-19T00:19:47Zcom_20.500.14352_14col_20.500.14352_15

Experiment and simulation in silicon PN-junction photodetectors: insights into electrical and optical transport Khaouani, Mohammed Sessa, Andrea De Stefano, Sebastiano Rouigueb, Hichem Belbachir, Mohammed Anes Mazzotti, Adolfo Pelella, Aniello Durante, Ofelia Di Bartolomeo, Antonio García Hemme, Eric Silicon PN junctions remain central to optoelectronic technologies due to their maturity and CMOS compatibility. We report the fabrication and comprehensive optoelectronic characterization of a silicon PN-junction photodiode demonstrating stable operation over a wide temperature range. The device exhibits excellent diode behavior, with a rectification ratio exceeding four orders of magnitude, an ideality factor close to unity above 0.3 V, and a series resistance below 100 Ω. Under white-light illumination, the photodiode shows a linear photocurrent response over broad optical power and temperature ranges, achieving an average responsivity of 0.3 A W−1. We implement a machine learning framework based on an Artificial Neural Network to perform global parameter estimation, demonstrating its effectiveness in generalizing across diverse experimental datasets. Moreover, we propose a comprehensive analytical model, validated by Atlas–Silvaco simulations, that successfully captures charge transport and photogeneration mechanisms. This integrated approach, combining experimental measurements, machine learning, numerical simulations and analytical modelling, provides a robust performance benchmark and deeper insights for optimizing silicon-based optoelectronic devices. 2026-05-18T18:43:07Z 2026-05-18T18:43:07Z 2026-05-18T18:43:07Z 2026-05 journal article https://hdl.handle.net/20.500.14352/136750 0921-4526 10.1016/j.physb.2026.418479 1873-2135 eng ORSA254881 PID2023-149369OB-C21 PID2023-148178OB-C21 info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/TED2021-130894B-C21/ES/HIPERDOPADO Y TEXTURIZADO DE SILICIO CON LASERES ULTRARRAPIDOS PARA MATERIALES FOTOVOLTAICOS AVANZADOS info:eu-repo/grantAgreement/CAM//TEC-2024%2FECO-72/ES/POR UNA TECNOLOGÍA FOTOVOLTAICA AMIGABLE DE BAJO IMPACTO AMBIENTAL/4EVERPV-CM Khaouani, Mohammed, et al. «Experiment and Simulation in Silicon PN-Junction Photodetectors: Insights into Electrical and Optical Transport». Physica B: Condensed Matter, vol. 730, mayo de 2026, p. 418479. DOI.org (Crossref), https://doi.org/10.1016/j.physb.2026.418479. http://creativecommons.org/licenses/by/4.0/ open access Attribution 4.0 International Elsevier