2026-06-27T23:03:55Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/176992023-08-27T12:43:53Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Clemente Barreira, Juan Antonio
author
Hubert, Guillaume
author
Franco Peláez, Francisco Javier
author
Vila, Francesca
author
Baylac, Maud
author
Puchner, Helmut
author
Velazco, Raoul
author
Mecha López, Hortensia
2023-06-17T21:52:31Z
2023-06-17T21:52:31Z
2017-08-01
0018-9499
10.1109/TNS.2017.2682984
https://hdl.handle.net/20.500.14352/17699
https://doi.org/10.1109/TNS.2017.2682984
This paper presents the characterization of the sensitivity to 14-MeV neutrons of a Commercial Off-The-Shelf (COTS) 90-nm Static Random Access Memories (SRAMs) manufactured by Cypress Semiconductor, when biased at ultra low voltage. Firstly, experiments exposing this memory at 14-MeV neutrons, when powering it up at bias voltages ranging from 0.5V to 3.3V, are presented and discussed. These results are in good concordance with theoretical predictions issued by the modeling tool MUSCA-SEP 3 (MUlti-SCAles Single Event Phenomena Predictive Platform). Then, this tool has been used to obtain Soft Error Rate (SER) predictions at different altitudes above the Earth’s surface of this device vs. its bias voltage. Finally, the effect of contamination by α articles has also been estimated at said range of bias Voltages.
eng
Sensitivity Characterization of a COTS 90-nm SRAM at Ultra Low Bias Voltage
journal article
URL
https://docta.ucm.es/bitstreams/4c5b721e-03ef-48bf-9b62-ded81bd85292/download
File
MD5
22527bb0302fbe2c2136e7a36f791378
1534903
application/pdf
FINAL_VERSION.pdf