2026-06-08T07:23:03Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/241952024-08-27T16:07:02Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
García Hemme, Eric
author
García Hernansanz, Rodrigo
author
Olea Ariza, Javier
author
Pastor Pastor, David
author
Prado Millán, Álvaro Del
author
Martil De La Plaza, Ignacio
author
González Díaz, Germán
2023-06-18T06:47:31Z
2023-06-18T06:47:31Z
2015-02-25
0022-3727
10.1088/0022-3727/48/7/075102
https://hdl.handle.net/20.500.14352/24195
http://dx.doi.org/10.1088/0022-3727/48/7/075102
http://iopscience.iop.org/
This paper presents the results for the transverse conductance across a bilayer formed by supersaturating with diverse transition metals a thin layer of a silicon wafer. The layer is formed by ion implantation and annealed by pulsed laser melting. The transverse conductance is exponentially activated, obtaining values ranging from 0.018 to 0.7 eV for the activation energy and pre-exponential factors of 10^-2-10^12 S depending on the annealing energy density. A semi-logarithmic plot of the pre-exponential factor versus activation energy shows an almost perfect linear behavior as stated by the Meyer Neldel rule. The Meyer Neldel energy obtained for implantation with different transition metals and also annealed in different conditions is 22meV, which is within the range of silicon phonons, thus confirming the hypothesis of the Multi Excitation Entropy theory.
eng
Meyer Neldel rule application to silicon supersaturated with transition metals
journal article
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c63684503c53be657b6496cd9e4f8f3b
1201427
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GonzalezDiez, G 137postprint + embargo 25_02_16.pdf
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36027
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GonzalezDiez, G 137postprint + embargo 25_02_16.pdf.txt