2026-06-08T11:03:58Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/243602024-08-30T14:50:20Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Scigaj, Mateusz
author
Gázquez, Jaume
author
Varela Del Arco, María
author
Fontcuberta Griñó, Josep
author
Herranz Casabona, Gervasi
author
Sánchez Barrera, Florencio
2023-06-18T06:50:18Z
2023-06-18T06:50:18Z
2015-11-15
0167-2738
10.1016/j.ssi.2015.09.002
https://hdl.handle.net/20.500.14352/24360
http://dx.doi.org/10.1016/j.ssi.2015.09.002
http://www.sciencedirect.com/http://www.arxiv.org
Interfaces between (110) and (111)SrTiO_3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO_3 (a-LAO), Y:ZrO_2 (a-YSZ), and SrTiO_3 (a-STO) become conducting above a critical thickness tc. Here we show that t_c for a-LAO is not depending on the substrate orientation, i.e. t_c (a-LAO/(110)STO) ≈ t_c(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: t_c(a-LAO/(110)STO) < t_c(a-YSZ/(110)STO) < t_c(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather than orientational-dependent enthalpy vacancy formation and diffusion. Scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces.
eng
Conducting interfaces between amorphous oxide layers and SrTiO_3(110) and SrTiO_3(111)
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VarelaArcoM 03 preprint.pdf
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35462e5fb498305c9080067bbdfc59e1
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VarelaArcoM 03 preprint.pdf.txt