2026-06-07T23:44:40Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/243602024-08-30T14:50:20Zcom_20.500.14352_14col_20.500.14352_15

Scigaj, Mateusz Gázquez, Jaume Varela Del Arco, María Fontcuberta Griñó, Josep Herranz Casabona, Gervasi Sánchez Barrera, Florencio 2023-06-18T06:50:18Z 2023-06-18T06:50:18Z 2015-11-15 0167-2738 10.1016/j.ssi.2015.09.002 https://hdl.handle.net/20.500.14352/24360 http://dx.doi.org/10.1016/j.ssi.2015.09.002 http://www.sciencedirect.com/ http://www.arxiv.org Interfaces between (110) and (111)SrTiO_3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO_3 (a-LAO), Y:ZrO_2 (a-YSZ), and SrTiO_3 (a-STO) become conducting above a critical thickness tc. Here we show that t_c for a-LAO is not depending on the substrate orientation, i.e. t_c (a-LAO/(110)STO) ≈ t_c(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: t_c(a-LAO/(110)STO) < t_c(a-YSZ/(110)STO) < t_c(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather than orientational-dependent enthalpy vacancy formation and diffusion. Scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces. eng open access Conducting interfaces between amorphous oxide layers and SrTiO_3(110) and SrTiO_3(111) journal article