2026-06-08T09:51:05Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/243602024-08-30T14:50:20Zcom_20.500.14352_14col_20.500.14352_15

Conducting interfaces between amorphous oxide layers and SrTiO_3(110) and SrTiO_3(111) Scigaj, Mateusz Gázquez, Jaume Varela Del Arco, María Fontcuberta Griñó, Josep Herranz Casabona, Gervasi Sánchez Barrera, Florencio Interfaces between (110) and (111)SrTiO_3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO_3 (a-LAO), Y:ZrO_2 (a-YSZ), and SrTiO_3 (a-STO) become conducting above a critical thickness tc. Here we show that t_c for a-LAO is not depending on the substrate orientation, i.e. t_c (a-LAO/(110)STO) ≈ t_c(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: t_c(a-LAO/(110)STO) < t_c(a-YSZ/(110)STO) < t_c(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather than orientational-dependent enthalpy vacancy formation and diffusion. Scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces. 2023-06-18T06:50:18Z 2023-06-18T06:50:18Z 2023-06-18T06:50:18Z 2015-11-15 journal article https://hdl.handle.net/20.500.14352/24360 0167-2738 10.1016/j.ssi.2015.09.002 eng STEMOX (239739) MAT2011- 29269-CO3 MAT2014-56063-C2-1-R 2014 SGR 734 RYC-2012-11709 open access ELSEVIER SCIENCE BV