2026-06-27T23:05:08Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/245942024-08-27T14:47:07Zcom_20.500.14352_14col_20.500.14352_15

García, Héctor Castán, Helena Dueñas, Salvador Bailón, Luis García Hernansanz, Rodrigo Olea Ariza, Javier Prado Millán, Álvaro Del Martil De La Plaza, Ignacio 2023-06-18T06:55:28Z 2023-06-18T06:55:28Z 2016-07-16 1556-276X 10.1186/s11671-016-1545-z https://hdl.handle.net/20.500.14352/24594 http://dx.doi.org/10.1186/s11671-016-1545-z http://nanoscalereslett.springeropen.com/ A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice. eng https://creativecommons.org/licenses/by/3.0/es/ open access Atribución 3.0 España Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications journal article