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Limitations of high pressure sputtering for amorphous silicon deposition García Hernansanz, Rodrigo García Hemme, Eric Montero Álvarez, Daniel Olea Ariza, Javier San Andrés Serrano, Enrique Prado Millán, Álvaro Del Ferrer, F. J. Martil De La Plaza, Ignacio González Díaz, Germán 537 High pressure sputtering Hydrogenated amorphous silicon High deposition rate. Electricidad Electrónica (Física) 2202.03 Electricidad © 2016 IOP Publishing Ltd. Authors would like to acknowledge the CAI de Técnicas Físicas and C.A.I de Espectroscopía of the Universidad Complutense de Madrid for the use of its laboratories and FTIR measurements. This work was partially supported by the Project MADRID-PV (Grant No. 2013/MAE-2780) funded by the Comunidad de Madrid, by the Spanish MINECO (Ministerio de economía y competitividad) under grant TEC 2013-41730-R and by the Universidad Complutense de Madrid (Programa de Financiación de Grupos de Investigación UCM–Banco Santander) under grant 910173-2014. D. Montero acknowledges the Spanish MINECO (Ministerio de economía y competitividad) for financial support under contract BES-2014-067585 Amorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An optical emission spectroscopy (OES) system has been used to identify the different species present in the plasma in order to obtain appropriate conditions to deposit high purity films. Composition measurements in agreement with the OES information showed impurities which critically depend on the deposition rate and on the gas pressure. We prove that films deposited at the highest RF power and 3.4 × 10^−2 mbar, exhibit properties as good as the ones of the films deposited by other more standard techniques. Ministerio de Economía y Competitividad (MINECO) Comunidad de Madrid Programa de Financiación de Grupos de Investigación UCM–Banco Santander Universidad Complutense de Madrid (UCM) Banco Santander Central Hispano (BSCH) Depto. de Estructura de la Materia, Física Térmica y Electrónica Fac. de Ciencias Físicas TRUE pub 2023-06-18T06:56:41Z 2023-06-18T06:56:41Z 2016-03 journal article https://hdl.handle.net/20.500.14352/24641 2053-1591 10.1088/2053-1591/3/3/036401 eng TEC 2013-41730-R MADRID-PV (2013/MAE-2780) 910173-2014 BES-2014-067585 open access application/pdf IOP Publishing