2026-06-29T07:33:10Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/247092023-09-07T18:23:18Zcom_20.500.14352_14col_20.500.14352_21
Neutron-Induced single events in a COTS soft-error free SRAM at low bias voltage
Sucesos Aislados inducidos por neutrones en una memoria estática de acceso aleatorio comercial a tensiones ultrabajas
Clemente Barreira, Juan Antonio
Franco Peláez, Francisco Javier
Vila, Francesca
Baylac, Maud
Ramos Vargas, Pablo Francisco
Vargas Vallejo, Vanessa Carolina
Mecha López, Hortensia
Agapito Serrano, Juan Andrés
Velazco, Raoul
537.8
539.16
621.3.049.77
COTS
LPSRAM
Neutron tests
Radiation hardness
Reliability
Soft error
SRAM
Electrónica (Física)
Radiactividad
Circuitos integrados
2203.07 Circuitos Integrados
©IEEE 2015
European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015) (15. 2015. Moscú).
Date of Conference: 14-18 Sept. 2015
This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.
Ministerio de Economía y Competitividad
Secretaría de Educación Superior Ciencia Tecnología e Innovación del Ecuador (SENESCYT)
Programa "José Castillejo" para movilidad de profesores
Depto. de Estructura de la Materia, Física Térmica y Electrónica
Depto. de Arquitectura de Computadores y Automática
Fac. de Ciencias Físicas
Fac. de Informática
TRUE
pub
2023-06-18T07:13:35Z
2023-06-18T07:13:35Z
2015-09-18
book part
https://hdl.handle.net/20.500.14352/24709
XXXX-XXXX
10.1109/RADECS.2015.7365640
eng
TIN2013-40968-P
open access
application/pdf
IEEE-Inst Electrical Electronics Engineers Inc