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oai:docta.ucm.es:20.500.14352/333852024-09-06T18:33:53Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Piqueras De Noriega, Francisco Javier author Sotillo Buzarra, Belén author Fernández Sánchez, Paloma author 2013-06-25 Vapor–solid (VS) growth method at temperatures in the range from 1000 °C to 1200 °C has been used to obtain In doped ZnS micro- and nanostructures. The morphologies of the synthesized structures depend strongly on the deposition temperature, consisting on nano- and microswords, nanoribbons and nanoplates, with a major presence of nanoplates and strongly hierarchical structures at the higher In contents. The degree of impurity incorporation and the influence of the dopant on the luminescence properties have been studied. While in pure ZnS the main deep level bands are peaked in the blue-green region, In doped samples show an orange-red emission. 0925-8388 10.1016/j.jallcom.2013.02.109 https://hdl.handle.net/20.500.14352/33385 http://dx.doi.org/10.1016/j.jallcom.2013.02.109 http://www.sciencedirect.com Cathodoluminescence of In doped ZnS nanostructures grown by vapor-solid method