2026-08-22T18:52:04Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/335492025-04-09T23:50:50Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Iribarren, A.
author
Fernández Sánchez, Paloma
author
Piqueras De Noriega, Francisco Javier
2023-06-19T13:24:08Z
2023-06-19T13:24:08Z
2014
0370-1972
10.1002/pssb.201248600
https://hdl.handle.net/20.500.14352/33549
http://dx.doi.org/10.1002/pssb.201248600
http://onlinelibrary.wiley.com
Cathodoluminescence (CL) of Te doped elongated ZnO microstructures obtained by a vapour-solid (V-S) technique has been investigated. The CL intensity changes along the microstructures axis are related to the gradient of Te content, which influences the intensity of the ZnO deep-level (DL) emission band. The main defects are vacancy complexes which are partially passivated by the isoelectronic Te doping. The weight on the total luminescence of the radiative processes related to defects has been estimated. A straightforward method based on the measurement of the band-to-band luminescence intensity under constant excitation and experimental conditions has been used. The recombination lifetimes for transition through defect levels were also estimated. [GRAPHICS] SEM image and cathodoluminescence emission of needle- and pencil-like TeO2-doped ZnO microstructures.
Recombination processes in Te-doped ZnO microstructures
journal article
URL
https://docta.ucm.es/bitstreams/56bd663f-bca4-442b-8a01-61589ddb0f08/download
File
MD5
9ddf9867579603d70b39022f22fda4c3
552999
application/pdf
Recombination_processes.pdf