2026-06-28T14:58:35Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/336832024-09-02T15:18:42Zcom_20.500.14352_14col_20.500.14352_15

Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector Martil De La Plaza, Ignacio García Hemme, Eric García Hernansanz, Rodrigo González Díaz, Germán Olea Ariza, Javier Pastor Pastor, David Prado Millán, Álvaro Del We report room-temperature operation of 1 x 1 cm(2) infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by a pulsed laser melting process. A high sub-band gap responsivity of 34 mVW(-1) has been obtained operating at the useful telecommunication applications wavelength of 1.55 mu m (0.8 eV). The sub-band gap responsivity shows a cut-off frequency as high as 1.9 kHz. These Si-based devices exhibit a non-previous reported specific detectivity of 1.7 x 10(4) cm Hz(1/2) W-1 at 660Hz, under a 1.55 mu m wavelength light. This work shows the potential of Ti supersaturated Si as a fully CMOS-compatible material for the infrared photodetection technology. 2023-06-19T13:26:10Z 2023-06-19T13:26:10Z 2023-06-19T13:26:10Z 2014-05-26 journal article https://hdl.handle.net/20.500.14352/33683 0003-6951 10.1063/1.4879851 eng NUMANCIA II (S2009/ENE-1477) (JCI-2011-10402) (JCI-2011-11471) open access American Institute of Physics