2026-07-30T02:45:39Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/346922023-08-27T11:49:55Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
San Andrés Serrano, Enrique
2023-06-19T14:54:21Z
2023-06-19T14:54:21Z
2015-01-14
1944-8244
10.1021/am5075248
https://hdl.handle.net/20.500.14352/34692
http://dx.doi.org/10.1021/am5075248
http://pubs.acs.org
We present the epitaxial growth of Ge and Ge_(0.94)Sn_(0.06) layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350°C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5nm Al_(2)O_(3), 5nm HfO_(2) or 1nm Al_(2)O_(3)/4nm HfO_(2), on strained Ge and strained Ge_(0.94)Sn_(0.06). Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
eng
High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors
journal article
URL
https://docta.ucm.es/bitstreams/5b1b89fb-beb2-4567-b6b3-fce063482a64/download
File
MD5
30a96bb9c90c1d0092cb3fa949c73213
4778318
application/pdf
SanAndrés 01 postprint + embargo.pdf