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oai:docta.ucm.es:20.500.14352/349292023-08-25T11:15:34Zcom_20.500.14352_14col_20.500.14352_15

Scigaj, M. Dix, N. Cabero Piris, Mariona Rivera Calzada, Alberto Carlos Santamaría Sánchez-Barriga, Jacobo Fontcuberta, J. 2023-06-19T14:57:09Z 2023-06-19T14:57:09Z 2014-06-23 0003-6951 10.1063/1.4885089 https://hdl.handle.net/20.500.14352/34929 http://dx.doi.org/10.1063/1.4885089 http://scitation.aip.org/ We show that yttria-stabilized zirconia (YSZ) films deposited on structurally dissimilar SrTiO_(3)(110) substrates exhibit two-dimensional layer-by-layer growth. We observed that, up to a thickness of about 15 nm, the square (001) basal plane of the cubic YSZ grows epitaxially on the rectangular (110) crystallographic plane of SrTiO3 substrates, with [110]YSZ(001)//[001]SrTiO_(3)(110) epitaxial relationship. Thus, the heterointerface presents symmetry discontinuity between the YSZ(001) film and the lower surface symmetry SrTiO_(3)(110) substrate. Beyond this specific case, we envisage similar approaches to develop other innovative oxide interfaces showing similar crystal symmetry discontinuities. eng open access Yttria-stabilized zirconia/SrTiO_(3) oxide heteroepitaxial interface with symmetry discontinuity journal article