2026-06-26T10:43:15Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/355402024-09-09T17:47:07Zcom_20.500.14352_14col_20.500.14352_15

López, I. Castaldini, A. Cavallini, A. Nogales Díaz, Emilio Méndez Martín, María Bianchi Piqueras De Noriega, Francisco Javier 2023-06-19T15:12:22Z 2023-06-19T15:12:22Z 2014-10-15 0022-3727 10.1088/0022-3727/47/41/415101 https://hdl.handle.net/20.500.14352/35540 http://dx.doi.org/10.1088/0022-3727/47/41/415101 http://iopscience.iop.org The behaviour of ß-Ga₂O₃ nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium oxide substrates. Photocurrent measurements have been carried out on both undoped and Sn-doped Ga₂O₃ nanowires to evidence the influence of the dopant on the photodetector performances. The responsivity spectrum of single nanowires show maxima in the energy range 4.8-5.4 eV and a strong dependence on the pulse frequency of the excitation light has been observed for undoped nanowires. Our results show that the responsivity of beta- Ga₂O₃ nanowires can be controlled by tuning the chopper frequency of the excitation light and/ or by doping of the nanowires. Non-linear behavior in characteristic current-voltage curves has been observed for Ga₂O₃ : Sn nanowires. The mechanism leading to this behaviour has been discussed and related to space-charged-limited current effects. In addition, the responsivity achieved by doped nanowires at lower bias is higher than for undoped ones. eng open access β-Ga₂O₃ nanowires for an ultraviolet light selective frequency photodetector journal article