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oai:docta.ucm.es:20.500.14352/427472023-08-27T18:03:31Zcom_20.500.14352_14col_20.500.14352_15

Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films Rezgui, B. Sibai, A. Nychyporuk, T. Lemiti, M. Bremond, G. Maestre Varea, David Palais, O. 538.9 Nanocrystals Confinement Física de materiales Física del estado sólido 2211 Física del Estado Sólido © Amer Inst Physics. This work was supported by the French National Agency of Research (ANR) in the framework of the “Cellules photovoltaïques tandem tout silicium”-DUOSIL grant program (Grant No. ANR-06-PSPV-005). The authors would also like to thank the Rhône-Alpes region for the financial support through the PHOSIL project. The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN(x)) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell. French National Agency of Research (ANR)-DUOSIL Rhône-Alpes Depto. de Física de Materiales Fac. de Ciencias Físicas TRUE pub 2023-06-20T00:34:17Z 2023-06-20T00:34:17Z 2010-05-03 journal article https://hdl.handle.net/20.500.14352/42747 0003-6951 10.1063/1.3427386 eng ANR-06-PSPV-005 PHOSIL project open access application/pdf Amer Inst Physics