2026-06-27T16:04:16Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/427502023-08-26T16:47:18Zcom_20.500.14352_14col_20.500.14352_15

Maestre Varea, David Palais, O. Barakel, D. Pasquinelli, M. Alfonso, B. Gourbilleau, F. De Laurentis, M. Irace, A. 2023-06-20T00:34:25Z 2023-06-20T00:34:25Z 2010-03-15 0021-8979 10.1063/1.3309761 https://hdl.handle.net/20.500.14352/42750 http://dx.doi.org/10.1063/1.3309761 http://aip.scitation.org SiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (10^2 kΩ) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under "dark" or "illumination" conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique. eng open access Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells journal article