2026-06-07T19:59:41Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/427702023-08-25T19:21:33Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Marcano, N.
author
Sangiao, S.
author
Magén, C.
author
Morellon, L.
author
Ibarra,, M. R.
author
Plaza, M.
author
Pérez García, Lucas
2023-06-20T00:35:26Z
2023-06-20T00:35:26Z
2010-09-29
1098-0121
10.1103/PhysRevB.82.125326
https://hdl.handle.net/20.500.14352/42770
http://dx.doi.org/10.1103/PhysRevB.82.125326
https://journals.aps.org
We have investigated the magnetotransport properties of ultrathin films of Bi grown on thermally oxidized Si(001) substrates with thickness ranging from 10 to 100 nm at temperatures down to 2 K and in magnetic fields up to 90 kOe. Remarkable differences both in temperature and field dependence of the Hall resistivity are found for the films with thickness above and below 20 nm. These observations can be explained due to the presence of surface states, which play an important role in determining the electronic transport properties of the thinnest films. The estimated surface carrier density 4 x 10^(13) cm^(-2) at room temperature correlates well with that recently reported from angle-resolved photoemission spectroscopy on ultrathin Bi(001) films.
eng
Role of the surface states in the magnetotransport properties of ultrathin bismuth films
journal article
URL
https://docta.ucm.es/bitstreams/a27c660a-6ad5-46a4-a61d-fdedd22e2564/download
File
MD5
bda0f870414eb4cb76cbb2b91c5552e6
827879
application/pdf
PérezLucas 01 libre.pdf