2026-06-28T20:38:49Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/440542024-08-29T14:31:04Zcom_20.500.14352_14col_20.500.14352_15

Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN Catarino, N. Nogales Díaz, Emilio Franco, N. Darakchieva, V. Miranda, S.M.C. Méndez Martín, María Bianchi Alves, E. Marques, J.F. Lorenz, K. The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, i.e. along the a-direction in a-plane and along the c-direction in c-plane GaN. The defect profile is bimodal with a pronounced surface damage peak and a second damage peak deeper in the bulk of the samples in both cases. For both surface orientations, the bulk damage saturates for high fluences. Interestingly, the saturation level for a-plane GaN is nearly three times lower than that for c-plane material suggesting very efficient dynamic annealing and strong resistance to radiation. a-plane GaN also shows superior damage recovery during post-implant annealing compared to c-plane GaN. For the lowest fluence, damage in a-plane GaN was fully removed and strong Eu-related red luminescence is observed. Although some residual damage remained after annealing for higher fluences as well as in all c-plane samples, optical activation was achieved in all samples revealing the red emission lines due to the ^5Do -> ^7F_2transition in the Eu_3+ ion. The presented results demonstrate a great promise for the use of ion beam processing for a-plane GaN based electronic devices as well as for the development of radiation tolerant electronics. 2023-06-20T03:37:02Z 2023-06-20T03:37:02Z 2023-06-20T03:37:02Z 2012-03 journal article https://hdl.handle.net/20.500.14352/44054 0295-5075 10.1209/0295-5075/97/68004 eng PTDC/CTM/100756/2008 HP-2008-0071 open access EPL Association, European Physical Society