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oai:docta.ucm.es:20.500.14352/440982024-09-09T12:38:14Zcom_20.500.14352_14col_20.500.14352_15

Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires Nogales Díaz, Emilio Sánchez, B. Méndez Martín, María Bianchi Piqueras De Noriega, Francisco Javier © 2008 Elsevier Ltd.. This work was supported by MEC (Project MAT 2006-01259) International Workshop on Beam Injection Assessment of Microstructure in Semiconductors (9. 2008-2009. Toledo). Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires have been investigated by means of the secondary electrons and cathodoluminescence (CL) techniques in the SEM. Red and blue-UV emission bands appear as complex bands and their components are influenced by the presence of In or Al, leading to a blue-shift of the blue-UV band usually observed in undoped gallium oxide. These In and Al related changes in the luminescence features of doped Ga_2O_3 nanostructures are discussed. 2023-06-20T03:37:54Z 2023-06-20T03:37:54Z 2009-04 journal article 0749-6036 10.1016/j.spmi.2008.11.027 https://hdl.handle.net/20.500.14352/44098 http://www.sciencedirect.com/science/journal/07496036/45/4-5 http://www.sciencedirect.com eng MAT 2006-01259 open access Academic Press Ltd- Elsevier Science Ltd