2026-06-08T23:16:53Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/441842023-08-26T09:58:04Zcom_20.500.14352_14col_20.500.14352_15

Development of CdZnTe doped with Bi for gamma radiation detection Hidalgo Alcalde, Pedro Cepeda Jiménez, C. M. Ruano, O. A. Carreño, F. Bulk CZT crystals doped with Bi (1 x 10(19) at/cm(3)) have been grown by the Oscillatory Bridgman method, the growth velocity and the zinc concentration profile being improved by the insertion of a Pt tube acting as a cold finger. The stoichiometric uniformity was examined by energy dispersive X-ray analysis, and the zinc concentration was confirmed by inductively coupled plasma mass spectroscopy and cathodoluminescence measurements. The resistivity value was in the range of 8 x 10(8) Omega cm , being smaller for the passivated sample, which at the same time had counter device properties. 2023-06-20T03:39:35Z 2023-06-20T03:39:35Z 2023-06-20T03:39:35Z 2010 journal article https://hdl.handle.net/20.500.14352/44184 1466-8033 10.1039/b905810a ESP2006-09935 S-0505/MAT-0279 FP7-SEC-2007-01 14240/00/NL/SH metadata only access Royal Soc Chemistry