2026-08-22T18:51:59Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/442272024-09-02T14:55:13Zcom_20.500.14352_14col_20.500.14352_15

00925njm 22002777a 4500 dc Martil De La Plaza, Ignacio author García Hemme, Eric author García Hernansanz, Rodrigo author González Díaz, Germán author Olea Ariza, Javier author Prado Millán, Álvaro Del author 2013 In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 10 4 cm(-1) in the photons energy range from 1.1 to 0.6 eV. 1110-662x 10.1155/2013/473196 https://hdl.handle.net/20.500.14352/44227 http://dx.doi.org/10.1155/2013/473196 http://www.hindawi.com Double ion implantation and pulsed laser melting processes for third generation solar cells