2026-08-22T18:52:27Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/442272024-09-02T14:55:13Zcom_20.500.14352_14col_20.500.14352_15

Martil De La Plaza, Ignacio García Hemme, Eric García Hernansanz, Rodrigo González Díaz, Germán Olea Ariza, Javier Prado Millán, Álvaro Del 2023-06-20T03:40:44Z 2023-06-20T03:40:44Z 2013 1110-662x 10.1155/2013/473196 https://hdl.handle.net/20.500.14352/44227 http://dx.doi.org/10.1155/2013/473196 http://www.hindawi.com In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 10 4 cm(-1) in the photons energy range from 1.1 to 0.6 eV. eng https://creativecommons.org/licenses/by/3.0/es/ open access Atribución 3.0 España Double ion implantation and pulsed laser melting processes for third generation solar cells journal article