2026-06-27T22:43:02Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/442332024-09-02T15:22:26Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Martil De La Plaza, Ignacio
author
García Hemme, Eric
author
González Díaz, Germán
author
Olea Ariza, Javier
author
Prado Millán, Álvaro Del
2023-06-20T03:40:53Z
2023-06-20T03:40:53Z
2011-11-09
0268-1242
10.1088/0268-1242/26/11/115003
https://hdl.handle.net/20.500.14352/44233
http://dx.doi.org/10.1088/0268-1242/26/11/115003
http://iopscience.iop.org
We assess the degree of crystallinity by means of UV and visible Raman scattering measurements of Ti implanted Si layers with very high doses (10(15)-5 x 10(16) cm(-2)) subsequently annealed by nanosecond pulsed laser melting (PLM). We obtain ultraheavily impurified Si layers with Ti concentrations six orders of magnitude above the solid solubility limit in a layer several tens of nanometers thick. The PLM annealing processes are needed to recover the crystal quality and to keep the high Ti concentration required to form an intermediate band (IB). The UV Raman analysis permits us to evaluate the lattice crystallinity of the different implanted doses probing only the implanted region and points out Ti interstitial location in the host lattice in agreement with theoretical predictions for IB formation. By contrast, visible Raman spectra are only sensitive to the presence of a fully amorphized implanted layer as in the rest of the crystalline layers the probing depth far exceeds the implanted layer thickness and the signal is dominated by the undamaged Si.
eng
UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation
journal article
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https://docta.ucm.es/bitstreams/c0dab847-486c-49fb-8ecc-b12bc4d2d7c1/download
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ac0195aae7447522a456a802b22a5fb9
594896
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Martil,12.pdf