2026-06-27T23:04:58Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/442472024-08-27T13:05:01Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Martil De La Plaza, Ignacio
author
González Díaz, Germán
author
Olea Ariza, Javier
2023-06-20T03:41:15Z
2023-06-20T03:41:15Z
2009-04-21
0022-3727
10.1088/0022-3727/42/8/085110
https://hdl.handle.net/20.500.14352/44247
http://dx.doi.org/10.1088/0022-3727/42/8/085110
http://iopscience.iop.org
In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.
eng
Electronic transport properties of Ti-impurity band in Si
journal article
URL
https://docta.ucm.es/bitstreams/70630b0b-5819-4389-bd46-b5622aad4580/download
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541123
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Martil,21.pdf