2026-06-27T16:19:39Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/442482024-08-27T15:55:37Zcom_20.500.14352_14col_20.500.14352_15

Martil De La Plaza, Ignacio González Díaz, Germán Olea Ariza, Javier 2023-06-20T03:41:17Z 2023-06-20T03:41:17Z 2009-01-26 0003-6951 10.1063/1.3077202 https://hdl.handle.net/20.500.14352/44248 http://dx.doi.org/10.1063/1.3077202 http://scitation.aip.org The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 10(20)-10(21) cm(-3) concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action. eng open access Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material journal article