2026-08-20T02:11:19Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/455182024-09-02T15:10:47Zcom_20.500.14352_14col_20.500.14352_21

Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells Martil De La Plaza, Ignacio García Hemme, Eric García Hernansanz, Rodrigo González Díaz, Germán Olea Ariza, Javier Prado Millán, Álvaro Del García, Héctor Castán, Helena Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon. 2023-06-20T05:46:13Z 2023-06-20T05:46:13Z 2023-06-20T05:46:13Z 2013 book part https://hdl.handle.net/20.500.14352/45518 XXXX-XXXX 10.1109/CDE.2013.6481411 eng NUMANCIA 2-CM (S2009/ENE-1477) JCI-2011-10402 JCI-2011-11471 open access IEEE