2026-06-01T02:01:58Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/509522024-09-09T14:48:41Zcom_20.500.14352_14col_20.500.14352_15
Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrix
García, J.A.
Plugaru, R
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Tate, T. J.
538.9
Local-Structure
Implanted Si
Erbium
Films
Cathodoluminescence
Centers
Física de materiales
© EDP Sciences.
International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10). (10.2003.Batz sur Mer, FRANCE ).
This work has been supported by MCYT (Project MAT 2000-
2119). R. Plugaru acknowledges MECD for the research grant
SB2000-0164.
The luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O has been studied by photoluminescence (PL) and cathodoluminescence (CL) in the scanning electron microscope. Annealing in nitrogen causes the formation of oxide species and Er-Si complexes or precipitates as well a spectral changes in the visible and infrared ranges. The main CL emission takes place in the visible range while PL spectra reveal intense visible and infrared emission. CL spectra show blue-violet, or green, emission bands whose relative intensities depend on the post-implantation annealing temperature. The PL spectra show a blue-violet band with a series of lines in the violet region related to phonon assisted transitions as well as different emission bands in the range 1200-1500 nm. The influence of the annealing-induced structural changes on the observed spectra is discussed.
MCYT
MECD
Depto. de Física de Materiales
Fac. de Ciencias Físicas
TRUE
pub
2023-06-20T10:40:10Z
2023-06-20T10:40:10Z
2004-07
journal article
https://hdl.handle.net/20.500.14352/50952
1286-0042
10.1051/epjap:2004083
spa
MAT 2000-2119
SB 2000-0164
open access
application/pdf
Cambridge Univ Press