2026-08-20T06:58:24Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/510532023-08-27T05:45:07Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Ottaviani, L.
author
Idrissi, H.
author
Hidalgo Alcalde, Pedro
author
Lancin, M.
2023-06-20T10:42:43Z
2023-06-20T10:42:43Z
2005
1610-1634
10.1002/pssc.200460505
https://hdl.handle.net/20.500.14352/51053
http://dx.doi.org/10.1002/pssc.200460505
http://onlinelibrary.wiley.com
This paper presents cathodoluminescence, electrical and structural characteristics of (11-20)-oriented 4H-SiC substrates, aiming at determining properties of some extended defects. As-grown basal plane dislocations with the Burgers vector b = 1/3 < 11-20 > previously revealed to be associated to a radiative recombination level at 1.80 eV. Well controlled dislocations were here introduced by annealing the sample under compressive stress at 973 K. After the annealing, double stacking faults were detected, formed by two Shockley partial dislocations gliding in two successive basal planes. These defects proved to introduce a rectifying behaviour during forward voltage operation, with a corresponding barrier height value of 0.58 eV at room temperature. Cathodoluminescence measurements allowed to attribute a radiative level at 1.80 eV to the extended defects, giving rise to a double luminescence peak.
eng
Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC
journal article
URL
https://docta.ucm.es/bitstreams/eb014427-87c7-4e88-b768-6a6adabab97c/download
File
MD5
89fc9c4eee0e8afd4b2e09db863fd111
635128
application/pdf
HidalgoP26.pdf
URL
https://docta.ucm.es/bitstreams/09230f99-987c-45a9-b8f8-bc88b553f315/download
File
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ed0ce475ab50c803f64159312a662901
14263
text/plain
HidalgoP26.pdf.txt