2026-08-22T19:39:22Zhttps://docta.ucm.es/rest/oai/requestoai:docta.ucm.es:20.500.14352/510602023-08-25T11:19:16Zcom_20.500.14352_14col_20.500.14352_15
Docta Complutense
author
Hidalgo Alcalde, Pedro
author
Palais, O.
author
Martinuzzi, S.
2023-06-20T10:42:54Z
2023-06-20T10:42:54Z
2004
0953-8984
10.1088/0953-8984/16/2/003
https://hdl.handle.net/20.500.14352/51060
http://dx.doi.org/10.1088/0953-8984/16/2/003
http://iopscience.iop.org
By means of a contactless microwave phase shift technique, the minority carrier lifetime and surface recombination velocity were measured in multicrystalline silicon wafers containing iron and chromium. The bulk lifetime can be deduced, leading to the determination of the concentration of interstitial iron [Fe-i] associated with boron, after pair dissociation annealing at 210 degreesC. It is found that [Fe-i] is higher in the vicinity of extended defects but decreases at the defects because the iron segregates irrespective of boron concentration and does not form pairs.
eng
Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps
journal article
URL
https://docta.ucm.es/bitstreams/dbc4ab9c-6766-4db0-ad4f-2c54500c820d/download
File
MD5
106301733d2915bbb40c65505abd5fb1
372012
application/pdf
HidalgoP29.pdf
URL
https://docta.ucm.es/bitstreams/1f30821b-e67a-4a59-b296-08bb19ebaecb/download
File
MD5
9a51a6a0838758ef875134c875cf064c
13392
text/plain
HidalgoP29.pdf.txt