2026-06-27T10:48:23Zhttps://docta.ucm.es/rest/oai/request

oai:docta.ucm.es:20.500.14352/510972024-09-09T17:50:51Zcom_20.500.14352_14col_20.500.14352_15

Díaz-Guerra Viejo, Carlos Vicent López, José Luis Piqueras De Noriega, Francisco Javier Dieguez, E. 2023-06-20T10:43:53Z 2023-06-20T10:43:53Z 2007-01-07 0022-3727 10.1088/0022-3727/40/1/005 https://hdl.handle.net/20.500.14352/51097 http://dx.doi.org/10.1088/0022-3727/40/1/005 http://iopscience.iop.org The influence of the doping level on the radiative recombination properties of GaSb:Se crystals has been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. CL images evidence a high dislocation density and dopant segregation around the dislocation cores in highly-doped crystals. A progressive reduction of the Se content leads to a lower dislocation density and a more uniform luminescence spatial distribution. CL spectra reveal the existence of three Se-related emission bands, centred in all the samples investigated at about 765, 740 and 719 meV, whose relative intensity is influenced by the doping level. Measurements carried out at different temperatures and excitation densities indicate that these bands can be attributed to transitions from the conduction band to deep acceptor levels. eng restricted access Influence of doping level on the cathodoluminescence of Se-doped GaSb crystals journal article