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oai:docta.ucm.es:20.500.14352/511042024-08-27T13:55:02Zcom_20.500.14352_14col_20.500.14352_15

Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2 Martil De La Plaza, Ignacio González Díaz, Germán Prado Millán, Álvaro Del San Andrés Serrano, Enrique 537 Thin-Films. Electricidad Electrónica (Física) 2202.03 Electricidad © 2007 American Institute of Physics. This work was partially supported by the Spanish M.E.C. under TEC2004 1237/MIC and TEC2007/63318 contracts. High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The formation of Si-O bonds after the sputtering of the HfO2 film in O-2 atmosphere was observed by infrared spectroscopy. Optical diagnosis of the plasma demonstrated a high density of O radicals in the system when working with O-2. The small radius and high reactivity of these O radicals are the source of the SiN oxidation. However, the structure of the SiN film is preserved during Ar sputtering. Spanish M.E.C. Depto. de Estructura de la Materia, Física Térmica y Electrónica Fac. de Ciencias Físicas TRUE pub 2023-06-20T10:44:04Z 2023-06-20T10:44:04Z 2007-11-05 journal article https://hdl.handle.net/20.500.14352/51104 0003-6951 10.1063/1.2811958 eng TEC2004-1237/MI TEC2007/63318 open access application/pdf Amer Inst Physics