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Martil De La Plaza, Ignacio González Díaz, Germán San Andrés Serrano, Enrique 2023-06-20T10:44:20Z 2023-06-20T10:44:20Z 2005-10 0268-1242 10.1088/0268-1242/20/10/011 https://hdl.handle.net/20.500.14352/51115 http://dx.doi.org/10.1088/0268-1242/20/10/011 http://iopscience.iop.org Oxide-semiconductor interface quality of high-pressure reactive sputtered (HPRS) TiO2 films annealed in O-2 at temperatures ranging from 600 to 900 degrees C, and atomic layer deposited (ALD) TiO2 films grown at 225 or 275 degrees C from TiCl4 or Ti(OC2H5)(4), and annealed at 750 degrees C in O-2, has been studied on silicon substrates. Our attention has been focused on the interfacial state and disordered-induced gap state densities. From our results, HPRS films annealed at 900 degrees C in oxygen atmosphere exhibit the best characteristics, with D-it density being the lowest value measured in this work (5-6 x 10(11) cm(-2) eV(-1)), and undetectable conductance transients within our experimental limits. This result can be due to two contributions: the increase of the SiO2 film thickness and the crystallinity, since in the films annealed at 900 degrees C rutile is the dominant crystalline phase, as revealed by transmission electron microscopy and infrared spectroscopy. In the case of annealing in the range of 600-800 degrees C, anatase and rutile phases coexist. Disorder-induced gap state (DIGS) density is greater for 700 degrees C annealed HPRS films than for 750 degrees C annealed ALD TiO2 films, whereas 800 degrees C annealing offers DIGS density values similar to ALD cases. For ALD films, the studies clearly reveal the dependence of trap densities on the chemical route used. eng open access A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition journal article